With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices. Based on the stable physical and chemical properties, GaN is suitable for LED applications (blue, green, UV-light), ultraviolet detectors and optoelectronic high-power and high-frequency devices.

Founded in 1988 in Hefei, JOPTEC is a global leader in R&D and manufacturing of hermetic metal-glass packages for hybrid integrated circuits, high power laser, optical communication, infrared detector and other optoelectronic devices. With the continuous investment in new technologies and facilities, JOPTEC now covers an area of 21,000 square meters and has developed a complete and mature process for the design, manufacturing, testing and quality inspection for hermetic metal-glass packages. Over the past few decades, JOPTEC’s capability, quality consistency and reliability have been recognized by customers worldwide that range from major international companies of high power laser, optical communication, defense and aerospace agencies to medical and research establishments.